Resonant Transport in Nb/GaAs/AlGaAs/GaAs Microstructures

Resonant transport in a hybrid semiconductor-superconductor microstructure grown by MBE on GaAs is presented. This structure experimentally realizes the prototype system originally proposed by de Gennes and Saint-James in 1963 in \emph{all}-metal structures. A low temperature single peak superimposed to the characteristic Andreev-dominated subgap conductance represents the mark of such resonant behavior. Random matrix theory of quantum transport was employed in order to analyze the observed magnetotransport properties and ballistic effects were included by directly solving the Bogoliubov-de Gennes equations.Comment: 7 pages REVTeX, 4 figures, to be published by World Scientific in Proceedings of International Symposium on Mesoscopic Superconductivity and Spintronics (NTT R&D Center Atsugi, Japan, March 2002

Excitonic Effects in Quantum Wires

We review the effects of Coulomb correlation on the linear and non-linear optical properties of semiconductor quantum wires, with emphasis on recent results for the bound excitonic states. Our theoretical approach is based on generalized semiconductor Bloch equations, and allows full three-dimensional multisubband description of electron-hole correlation for arbitrary confinement profiles. In particular, we consider V- and T-shaped structures for which significant experimental advances were obtained recently. Above band gap, a very general result obtained by this approach is that electron-hole Coulomb correlation removes the inverse-square-root single-particle singularity in the optical spectra at band edge, in agreement with previous reports from purely one-dimensional models. Strong correlation effects on transitions in the continuum are found to persist also at high densities of photoexcited carriers. Below bandgap, we find that the same potential- (Coulomb) to kinetic-energy ratio holds for quite different wire cross sections and compositions. As a consequence, we identify a shape- and barrier-independent parameter that governs a universal scaling law for exciton binding energy with size. Previous indications that the shape of the wire cross-section may have important effects on exciton binding are discussed in the light of the present results.Comment: Proc. OECS-5 Conference, G\"ottingen, 1997 (To appear in Phys. Stat. Sol. (b)

General analytic predictions of two-field inflation and perturbative reheating

16 pages, 5 figures, Version 2 includes a revised comparison with Meyers and Tarrant [41

Well-width dependence of exciton-phonon scattering in InxGa1 - xAs/GaAs single quantum wells

The temperature and density dependencies of the exciton dephasing time in In0.18Ga0.82As/GaAs single quantum wells with different thicknesses have been measured by degenerate four-wave mixing. The exciton-phonon scattering contribution to the dephasing is isolated by extrapolating the dephasing rate to zero-exciton density. From the temperature dependence of this rate we have deduced the linewidth broadening coefficients for acoustic and optical phonons. We find acoustic-phonon coefficients that increase from 1.6 to 3 μeV/K when increasing the well width from 1 to 4 nm. This is in quantitative agreement with theoretical predictions when the spatial extension of the exciton wave function, strongly penetrating into the GaAs barrier in thin InxGa1-xAs quantum wells, is taken into account. The optical-phonon coefficient does not show a systematic dependence on well thickness, and is comparable with the value for bulk GaAs

A Prognostic Model for Estimating the Time to Virologic Failure in HIV-1 Infected Patients Undergoing a New Combination Antiretroviral Therapy Regimen

<p>Abstract</p> <p>Background</p> <p>HIV-1 genotypic susceptibility scores (GSSs) were proven to be significant prognostic factors of fixed time-point virologic outcomes after combination antiretroviral therapy (cART) switch/initiation. However, their relative-hazard for the time to virologic failure has not been thoroughly investigated, and an expert system that is able to predict how long a new cART regimen will remain effective has never been designed.</p> <p>Methods</p> <p>We analyzed patients of the Italian ARCA cohort starting a new cART from 1999 onwards either after virologic failure or as treatment-naïve. The time to virologic failure was the endpoint, from the 90^thday after treatment start, defined as the first HIV-1 RNA > 400 copies/ml, censoring at last available HIV-1 RNA before treatment discontinuation. We assessed the relative hazard/importance of GSSs according to distinct interpretation systems (Rega, ANRS and HIVdb) and other covariates by means of Cox regression and random survival forests (RSF). Prediction models were validated via the bootstrap and c-index measure.</p> <p>Results</p> <p>The dataset included 2337 regimens from 2182 patients, of which 733 were previously treatment-naïve. We observed 1067 virologic failures over 2820 persons-years. Multivariable analysis revealed that low GSSs of cART were independently associated with the hazard of a virologic failure, along with several other covariates. Evaluation of predictive performance yielded a modest ability of the Cox regression to predict the virologic endpoint (c-index≈0.70), while RSF showed a better performance (c-index≈0.73, p < 0.0001 vs. Cox regression). Variable importance according to RSF was concordant with the Cox hazards.</p> <p>Conclusions</p> <p>GSSs of cART and several other covariates were investigated using linear and non-linear survival analysis. RSF models are a promising approach for the development of a reliable system that predicts time to virologic failure better than Cox regression. Such models might represent a significant improvement over the current methods for monitoring and optimization of cART.</p

Metal/III-V diodes engineered by means of Si interlayers: interface reactions versus local interface dipoles

We present studies of Al/n-GaAs(001) and Al/p-GaAs(001) diodes in which the Schottky barrier height was varied by fabricating Si bilayers at the interface under either Ga or Al flux. Comparison of the effect of each interlayer on the n- and p-type barrier height allowed us to rule out any major role of interface reactions and test the predictions of the local interface-dipole model of Schottky barrier tuning. (C) 2001 American Institute of Physics

Kinematic coordination in human gait: relation to mechanical energy cost

Twenty-four subjects walked at different, freely chosen speeds (V) ranging from 0.4 to 2.6 m s-1, while the motion and the ground reaction forces were recorded in three-dimensional space. We considered the time course of the changes of the angles of elevation of the trunk, pelvis, thigh, shank, and foot in the sagittal plane. These angles specify the orientation of each segment with respect to the vertical and to the direction of forward progression. The changes of the trunk and pelvis angles are of limited amplitude and reflect the dynamics of both right and left lower limbs. The changes of the thigh, shank, and foot elevation are ample, and they are coupled tightly among each other. When these angles are plotted one versus the others, they describe regular loops constrained on a plane. The plane of angular covariation rotates, slightly but systematically, along the long axis of the gait loop with increasing V. The rotation, quantified by the change of the direction cosine of the normal to the plane with the thigh axis (u3t), is related to a progressive phase shift between the foot elevation and the shank elevation with increasing V. As a next step in the analysis, we computed the mass-specific mean absolute power (Pu) to obtain a global estimate of the rate at which mechanical work is performed during the gait cycle. When plotted on logarithmic coordinates, Pu increases linearly with V. The slope of this relationship varies considerably across subjects, spanning a threefold range. We found that, at any given V > 1 m s-1, the value of the plane orientation (u3t) is correlated with the corresponding value of the net mechanical power (Pu). On the average, the progressive rotation of the plane with increasing V is associated with a reduction of the increment of Pu that would occur if u3t remained constant at the value characteristic of low V. The specific orientation of the plane at any given speed is not the same in all subjects, but there is an orderly shift of the plane orientation that correlates with the net power expended by each subject. In general, smaller values of u3t tend to be associated with smaller values of Pu and vice versa. We conclude that the parametric tuning of the plane of angular covariation is a reliable predictor of the mechanical energy expenditure of each subject and could be used by the nervous system for limiting the overall energy expenditure

Phonon study of temperature evolution of strain in GaAs/Si(0 0 1) and GaAs/Si(1 1 1) heterostructures

The temperature evolution of strain in GaAs layers grown on Si (0 0 1) and Si (1 1 1) substrates has been investigated by Raman scattering. The Raman results show that for temperatures lower than a certain temperature (≅280 K for the (0 0 1) and ≅400 K for (1 1 1) growth directions) the phonon modes for the epilayers shift toward lower frequencies in comparison to bulk material. This is due to the “thermal” strain arising from the difference in thermal expansion coefficients between GaAs epilayer and Si. A reverse phenomenon occurs at higher temperatures indicating the presence of compressive strain due to the mismatch in lattice constants between the GaAs epilayers and the Si substrate